Tokyo researchers unveil 40-picosecond spintronic memory for AI hardware

By PulseAugur Editorial · Summary by gemini-2.5-flash-lite from 1 source

Researchers at the University of Tokyo have developed a novel spintronic memory device that can switch states in an astonishing 40 picoseconds, significantly outperforming current DRAM technology. This non-volatile device operates with minimal heat generation, offering a promising avenue for more efficient AI hardware and advanced memory systems. AI

Summary written by gemini-2.5-flash-lite from 1 source. How we write summaries →

IMPACT This breakthrough in memory speed and efficiency could significantly enhance AI hardware capabilities and reduce power consumption.

RANK_REASON Research milestone from a university lab on a new type of memory technology. [lever_c_demoted from research: ic=1 ai=0.7]

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Tokyo researchers unveil 40-picosecond spintronic memory for AI hardware

COVERAGE [1]

Tom's Hardware TIER_1 · Etiido Uko · 2026-05-20 10:20

Laser-driven spintronic memory device switches 1,000 times faster than DRAM —non-volatile device switches in 40 picoseconds while generating almost no heat

Researchers at the University of Tokyo demonstrated a non-volatile Mn₃Sn magnetic switching device capable of flipping bits in just 40 picoseconds while generating minimal heat, potentially paving the way for lower-power AI hardware and memory systems.

COVERAGE [1]

Laser-driven spintronic memory device switches 1,000 times faster than DRAM —non-volatile device switches in 40 picoseconds while generating almost no heat

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